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HFH20N50 Datasheet, HUASHAN ELECTRONIC

HFH20N50 transistor equivalent, n-channel enhancement mode field effect transistor.

HFH20N50 Avg. rating / M : 1.0 rating-110

datasheet Download (Size : 626.51KB)

HFH20N50 Datasheet

Features and benefits


* 20A, 500V(See Note), RDS(on) <0.26Ω@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS compliant █ Maximum Ratin.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.

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TAGS

HFH20N50
N-Channel
Enhancement
Mode
Field
Effect
Transistor
HUASHAN ELECTRONIC

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